MBR(F,B)10H90CT & MBR(F,B)10H100CT
Vishay General Semiconductor
Document Number: 88668
Revision: 08-Nov-07
For technical questions within your region, please contact one of the following:
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1
Dual Common-Cathode High-Voltage Schottky Rectifier
High Barrier Technology for Improved High Temperature Performance
FEATURES
? Guardring for overvoltage protection
Lower power losses, high efficiency
Low forward voltage drop
Low leakage current
High forward surge capability
High frequency operation
Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
Solder Dip 260 °C, 40 s (for TO-220AB and
ITO-220AB package)
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching mode
power supplies, freewheeling diodes, dc-to-dc
converters or polarity protection application.
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB
Epoxy meets UL 94V-0
flammability rating
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test, HE3 suffix
for high reliability grade
(AEC Q101 qualified), meets JESD 201 class 2
whisker test
Polarity:
As marked
Mounting Torque:
10 in-lbs maximum
PRIMARY CHARACTERISTICS
IF(AV)
5 A x 2
VRRM
90 V, 100 V
IFSM
150 A
VF
0.61 V
IR
3.5 μA
TJ max. 175 °C
TO-263AB
3
1
2
MBRF10H90CT
CASE
PIN 2
PIN 1
PIN 3
TO-220AB
MBR10H90CT
MBR10H100CT
ITO-220AB
MBRF10H100CT
MBRB10H90CT
MBRB10H100CT
PIN 1
PIN 2
K
HEATSINK
1
32
1
2
K
PIN 2
PIN 1
PIN 3
MAXIMUM RATINGS (TC
= 25 °C unless otherwise noted)
PARAMETER SYMBOL MBR10H90CT MBR10H100CT UNIT
Maximum repetitive peak reverse voltage VRRM
90 100 V
Working peak reverse voltage VRWM
90 100 V
Maximum DC blocking voltage VDC
90 100 V
Maximum average forward rectified current at TC
= 105 °C
total device
per diode
IF(AV)
10
5.0
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
IFSM
150 A
Peak repetitive reverse current per diode at tp
= 2 μs, 1 kHz I
RRM
0.5 A
Voltage rate of change (rated VR) dV/dt 10 000 V/μs
Operating junction and storage temperature range TJ, TSTG
- 65 to + 175 °C
Isolation voltage (ITO-220AB only) from terminals to heatsink t = 1 min VAC
1500 V
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